Systems and methods for forming apertures in microfeature workpieces

ABSTRACT

Systems and methods for forming apertures in microfeature workpieces are disclosed herein. In one embodiment, a method includes directing a laser beam toward a microfeature workpiece to form an aperture and sensing the laser beam pass through the microfeature workpiece in real time. The method can further include determining a number of pulses of the laser beam and/or an elapsed time to form the aperture and controlling the laser beam based on the determined number of pulses and/or the determined elapsed time to form a second aperture in the microfeature workpiece.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No. 14/029,105filed Sep. 17, 2013, now U.S. Pat. No. 8,686,313, which is a divisionalof U.S. application Ser. No. 11/413,289 filed Apr. 28, 2006, now U.S.Pat. No. 8,534,485, which is a divisional of U.S. application Ser. No.10/839,457 filed May 5, 2004, now abandoned, and is related to U.S.application Ser. No. 11/414,999 filed May 1, 2006, now U.S. Pat. No.8,664,562, each of which is incorporated herein by reference in itsentirety.

TECHNICAL FIELD

The present invention is related to systems and methods for formingapertures in microfeature workpieces. More particularly, the inventionis directed to systems and methods for forming apertures with laserbeams.

BACKGROUND

Microelectronic devices are used in cell phones, pagers, personaldigital assistants, computers, and many other products. A die-levelpackaged microelectronic device can include a microelectronic die, aninterposer substrate or lead frame attached to the die, and a moldedcasing around the die. The microelectronic die generally has anintegrated circuit and a plurality of bond-pads coupled to theintegrated circuit. The bond-pads are coupled to terminals on theinterposer substrate or lead frame. The interposer substrate can alsoinclude ball-pads coupled to the terminals by conductive traces in adielectric material. An array of solder balls is configured so that eachsolder ball contacts a corresponding ball-pad to define a “ball-grid”array. Packaged microelectronic devices with ball-grid arrays aregenerally higher grade packages that have lower profiles and higher pincounts than conventional chip packages that use a lead frame.

Die-level packaged microelectronic devices are typically made by (a)forming a plurality of dies on a semiconductor wafer, (b) cutting thewafer to singulate the dies, (c) attaching individual dies to anindividual interposer substrate, (d) wire-bonding the bond-pads to theterminals of the interposer substrate, and (e) encapsulating the dieswith a molding compound. Mounting individual dies to individualinterposer substrates is time consuming and expensive. Also, as thedemand for higher pin counts and smaller packages increases, it becomesmore difficult to (a) form robust wire-bonds that can withstand theforces involved in molding processes and (b) accurately form othercomponents of die-level packaged devices. Therefore, packaging processeshave become a significant factor in producing semiconductor and othermicroelectronic devices.

Another process for packaging microelectronic devices is wafer-levelpackaging. In wafer-level packaging, a plurality of microelectronic diesare formed on a wafer and a redistribution layer is formed over thedies. The redistribution layer includes a dielectric layer, a pluralityof ball-pad arrays on the dielectric layer, and a plurality of tracescoupled to individual ball-pads of the ball-pad arrays. Each ball-padarray is arranged over a corresponding microelectronic die, and thetraces couple the ball-pads in each array to corresponding bond-pads onthe die. After forming the redistribution layer on the wafer, astenciling machine deposits discrete blocks of solder paste onto theball-pads of the redistribution layer. The solder paste is then reflowedto form solder balls or solder bumps on the ball-pads. After forming thesolder balls on the ball-pads, the wafer is cut to singulate the dies.Microelectronic devices packaged at the wafer level can have high pincounts in a small area, but they are not as robust as devices packagedat the die level.

In the process of forming and packaging microelectronic devices,numerous holes are formed in the wafer and subsequently filled withmaterial to form conductive lines, bond-pads, interconnects, and otherfeatures. One existing method for forming holes in wafers is reactiveion etching (RIE). In RIE, many holes on the wafer can be formedsimultaneously. RIE, however, has several drawbacks. For example, RIEmay attack features in the wafer that should not be etched, and the RIEprocess is slow. Typically, RIE processes have removal rates of fromapproximately 5μ/min to approximately 50μ/min. Moreover, RIE requiresseveral additional process steps, such as masking and cleaning.

Another existing method for forming holes in wafers is laser ablation. Aconventional laser ablation process includes forming a series of testholes in a test wafer to determine the time required to form variousthrough holes in the test wafer. The test holes are formed by directingthe laser beam to selected points on the wafer for different periods oftime. The test wafer is subsequently inspected manually to determine thetime required to form a through hole in the wafer. The actual time foruse in a run of identical wafers is then calculated by adding anoverdrill factor to the time required to drill the test holes to ensurethat the holes extend through the wafer. A run of identical wafers isthen processed based on the data from the test wafer. A typical lasercan form more than 10,600 holes through a 750 Å wafer in less than twominutes.

Laser ablation, however, has several drawbacks. For example, the heatfrom the laser beam creates a heat-affected zone in the wafer in whichdoped elements can migrate. Moreover, because the wafer thickness isgenerally non-uniform, the laser may not form a through hole in thickregions of the wafer or the wafer may be overexposed to the laser beamand consequently have a large heat-affected zone in thin regions of thewafer. Accordingly, there exists a need to improve the process offorming through holes or deep blind holes in microfeature workpieces.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view of a system for forming an aperture in amicrofeature workpiece in accordance with one embodiment of theinvention.

FIG. 2 is a schematic side cross-sectional view of the system of FIG. 1with the laser directing a laser beam toward the microfeature workpiece.

FIG. 3 is a top plan view of the microfeature workpiece without aredistribution layer.

FIG. 4 is a schematic side cross-sectional view of the system of FIG. 1with the laser forming a production aperture in the microfeatureworkpiece.

DETAILED DESCRIPTION

A. Overview

The present invention is directed toward systems and methods for formingapertures in microfeature workpieces. The term “microfeature workpiece”is used throughout to include substrates in or on which microelectronicdevices, micromechanical devices, data storage elements, and otherfeatures are fabricated. For example, microfeature workpieces can besemiconductor wafers, glass substrates, insulated substrates, or manyother types of substrates. Several specific details of the invention areset forth in the following description and in FIGS. 1-4 to provide athorough understanding of certain embodiments of the invention. Oneskilled in the art, however, will understand that the present inventionmay have additional embodiments, or that other embodiments of theinvention may be practiced without several of the specific featuresexplained in the following description.

Several aspects of the invention are directed to methods for formingapertures in microfeature workpieces. In one embodiment, a methodincludes directing a laser beam toward a microfeature workpiece to forman aperture and sensing the laser beam pass through the microfeatureworkpiece in real time. In one aspect of this embodiment, the methodfurther includes determining a number of pulses of the laser beam and/oran elapsed time to form the aperture and controlling the laser beambased on the determined number of pulses and/or the determined elapsedtime to form a second aperture in the microfeature workpiece. In anotheraspect of this embodiment, an electromagnetic radiation sensor sensesthe laser beam. The method can further include positioning themicrofeature workpiece between a laser and an electromagnetic radiationsensor before directing the laser beam.

In another embodiment, a method includes ablating a microfeatureworkpiece by directing pulses of a laser beam to form a test aperture inthe microfeature workpiece and automatically determining a number ofpulses of the laser beam and/or an elapsed time to form the testaperture. The method further includes automatically controlling thelaser beam based on the determined number of pulses and/or thedetermined elapsed time to form a plurality of production apertures inthe microfeature workpiece. In one aspect of this embodiment,automatically controlling the laser beam includes directing the laserbeam toward the microfeature workpiece for an adjusted number of pulsesand/or an adjusted time to form at least one of the productionapertures. The adjusted number of pulses can be different from thedetermined number of pulses, and the adjusted time can be different fromthe determined elapsed time. For example, if the production aperture isa blind hole, the adjusted number of pulses can be less than thedetermined number of pulses and/or the adjusted time can be less thanthe determined elapsed time by an underdrill factor. Alternatively, ifthe production aperture is a through hole, the adjusted number of pulsescan be greater than the determined number of pulses and/or the adjustedtime can be greater than the determined elapsed time by an overdrillfactor.

Another aspect of the invention is directed to systems for formingapertures in microfeature workpieces. In one embodiment, a systemincludes a laser configured to produce a laser beam along a beam path,an electromagnetic radiation sensor positioned along the beam path tosense the laser beam, and a workpiece carrier configured to selectivelyposition a microfeature workpiece in the beam path before theelectromagnetic radiation sensor to form an aperture in the microfeatureworkpiece. The system can further include a controller operably coupledto the laser, the electromagnetic radiation sensor, and the workpiececarrier. The controller can have a computer-readable medium containinginstructions to perform any one of the above-described methods.

B. Embodiments of Systems for Forming Apertures in MicrofeatureWorkpieces

FIG. 1 is a schematic view of a system 100 for forming an aperture in amicrofeature workpiece 160 in accordance with one embodiment of theinvention. In the illustrated embodiment, the system 100 includes alaser 110, a workpiece carrier 130, a sensor 140, and a controller 150.The laser 110, the workpiece carrier 130, and the sensor 140 areoperatively coupled to the controller 150. The laser 110 selectivelygenerates a laser beam 120 to form apertures in the microfeatureworkpiece 160 by ablating the workpiece material. The system 100 canalso include a metrology tool 102 (shown schematically in broken lines)to determine the thickness of portions of the microfeature workpiece160.

The laser 110 can include an illumination source 112, a galvo mirror114, and a telecentric lens 116. In one embodiment, the laser 110 can bea solid-state laser that produces a laser beam with a wavelength ofapproximately 355 nm and a pulse frequency of approximately 10 kHz toapproximately 75 kHz. In one aspect of this embodiment, the powergenerated by the laser 110 can be approximately 7 watts, and the laserbeam can have a pulse frequency of approximately 20 kHz to approximately30 kHz. In additional embodiments, other lasers may be used withdifferent configurations.

The workpiece carrier 130 is configured to hold and properly positionthe microfeature workpiece 160. More specifically, the workpiece carrier130 positions the microfeature workpiece 160 relative to the laser 110so that the laser beam 120 forms an aperture at a desired location onthe workpiece 160. The workpiece carrier 130 can be moveable along threeorthogonal axes, such as a first lateral axis (X direction), a secondlateral axis (Y direction), and/or an elevation axis (Z direction). Inother embodiments, the workpiece carrier 130 may not be movable alongall three orthogonal axes, and/or the laser 110 may be movable.

In the illustrated embodiment, the workpiece carrier 130 engages andsupports the perimeter of the microfeature workpiece 160. Morespecifically, the microfeature workpiece 160 has a first surface 166, asecond surface 168 opposite the first surface 166, and a perimeter edge169. The workpiece carrier 130 can have an edge-grip end effectorconfigured to engage the perimeter edge 169 of the microfeatureworkpiece 160 without contacting the first and second surfaces 166 and168. In other embodiments, the workpiece carrier 130 may contact aportion of the first and/or second surfaces 166 and/or 168 of themicrofeature workpiece 160. For example, the workpiece carrier 130 mayengage the perimeter edge 169 and a perimeter region of the secondsurface 168 to carry the microfeature workpiece 160 without obscuringthe laser beam 120 from passing through the desired points on theworkpiece 160.

The sensor 140 senses electromagnetic radiation to determine when theaperture has been formed in the microfeature workpiece 160. Morespecifically, the sensor 140 detects when the laser beam 120 passesthrough the microfeature workpiece 160 and sends a signal to thecontroller 150 indicating that an aperture has been formed. The sensor140 can be an electromagnetic radiation sensor, such as a photodiode,selected to respond to the wavelength of the laser beam 120. The laser110 and the sensor 140 can be arranged so that the workpiece carrier 130can position the microfeature workpiece 160 between the laser 110 andthe sensor 140. The sensor 140 can be movable relative to themicrofeature workpiece 160 to be aligned with the laser beam 120. Forexample, the sensor 140 can be moveable along the three orthogonal axesX, Y and Z. In other embodiments, the sensor 140 can be fixed relativeto the laser 110 such that they can move together.

FIG. 2 is a schematic side cross-sectional view of the system 100 withthe laser beam 120 directed toward the microfeature workpiece 160 (shownenlarged for illustrative purposes). In the illustrated embodiment, themicrofeature workpiece 160 includes a substrate 170 having a pluralityof microelectronic dies 180 and a redistribution layer 190 formed on thesubstrate 170. Each microelectronic die 180 can have an integratedcircuit 184 (shown schematically) and a plurality of bond-pads 182coupled to the integrated circuit 184. The redistribution layer 190includes a dielectric layer 192 and a plurality of ball-pads 196 in thedielectric layer 192. The ball-pads 196 are arranged in ball-pad arraysrelative to the microelectronic dies 180 such that each die 180 has acorresponding array of ball-pads 196. The redistribution layer 190 alsoincludes a plurality of conductive lines 194 in or on the dielectriclayer 192 to couple the bond-pads 182 of the microelectronic dies 180 tocorresponding ball-pads 196 in the ball-pad arrays. In otherembodiments, the microfeature workpiece 160 may not includemicroelectronic dies 180 and/or the redistribution layer 190. Forexample, the microfeature workpiece 160 can be a circuit board or othersubstrate.

C. Embodiments of Methods for Forming Apertures in MicrofeatureWorkpieces

FIG. 2 also illustrates an embodiment of a method for forming aperturesin microfeature workpieces. The controller 150 generally containscomputer operable instructions that generate signals for controlling thelaser 110, the workpiece carrier 130, and the sensor 140 to form asingle aperture or a plurality of apertures in the microfeatureworkpiece 160. In one embodiment, the controller 150 controls the laser110 to form a test aperture 162 in the microfeature workpiece 160 anddetermines the number of pulses of the laser beam 120 and/or the timerequired to form the test aperture 162. In this embodiment, the laser110 directs the laser beam 120 toward the first surface 166 of themicrofeature workpiece 160 at a test location to form the test aperture162. The laser beam 120 locally ablates the workpiece material andproduces a vapor 161 that can be convected away from the region adjacentto the test aperture 162. The laser 110 directs the laser beam 120toward the microfeature workpiece 160 until the sensor 140 senses thelaser beam 120. The sensor 140 detects the laser beam 120 when the testaperture 162 extends through the microfeature workpiece 160. When thesensor 140 detects the laser beam 120, it sends a signal to thecontroller 150 which in turn sends a control signal to the laser 110 tostop generating the laser beam 120. The controller 150 stores theelapsed time and/or the number of pulses of the laser beam 120 requiredto form the test aperture 162.

The test aperture 162 can be formed in a noncritical portion of themicrofeature workpiece 160. For example, FIG. 3 is a top plan view ofthe microfeature workpiece 160 without the redistribution layer 190.Referring to FIGS. 2 and 3, test apertures 162 can be formed in aperimeter region of the microfeature workpiece 160 proximate to theperimeter edge 169 and/or along the singulation lines A-A (FIG. 3) wherethe workpiece 160 is cut to separate the packaged microelectronic dies180. Accordingly, in the illustrated embodiment, the portion of themicrofeature workpiece 160 that includes the test aperture(s) 162 is notused for circuitry or other components of the dies 180 or workpiece 160.A plurality of test apertures are generally formed in a microfeatureworkpiece, but in many applications only a single test aperture may beformed in a workpiece. In other embodiments, not every workpiece in arun of workpieces needs to include a test aperture.

FIG. 4 is a schematic side cross-sectional view of the system 100 withthe laser 110 forming a production aperture 164 in the microfeatureworkpiece 160. Based on the data gathered from forming the test aperture162, the controller 150 and/or an operator develops a recipe to form theproduction aperture 164. The controller 150 can use the number of pulsesof the laser beam 120 and/or the elapsed time to form the test aperture162 in forming the production aperture 164. For example, the controller150 can calculate an expected number of pulses of the laser beam 120required to form the production aperture 164 based on the stored numberof pulses required to form the test aperture 162. Additionally, thecontroller 150 can calculate an expected time required to form theproduction aperture 164 based on the stored elapsed time to form thetest aperture 162.

In one embodiment, the expected number of pulses of the laser beam 120and the expected time required to form the production aperture 164 aredetermined by multiplying the stored number of pulses and the storedelapsed time to form the test aperture 162 by a correction factor. Thecorrection factor can adjust for differences in the thickness across themicrofeature workpiece 160. For example, the metrology tool 102 (FIG. 1)can measure the thickness of the workpiece 160 at the test aperture 162location and at the production aperture 164 location. The correctionfactor can account for the difference in the thickness of the workpiece160 at the two locations. The correction factor can also adjust fordifferences in the workpiece material at the test aperture 162 locationand at the production aperture 164 location. For example, in theillustrated embodiment, the test aperture 162 is formed through materialadjacent to a first die 180 a, and the production aperture 164 is formedthrough the first die 180 a including the bond-pads 182. The correctionfactor can also increase the reliability of the process. For example, ifthe production aperture is a through hole, the correction factor caninclude an overdrill factor to increase the likelihood that theproduction aperture is formed completely through the microfeatureworkpiece.

After the controller 150 calculates the expected number of pulses of thelaser beam 120 and/or the expected time required to form the productionaperture 164, the system 100 forms the production aperture 164 in themicrofeature workpiece 160. The workpiece carrier 130 properly positionsthe microfeature workpiece 160 relative to the laser 110, and then thelaser 110 directs the laser beam 120 toward the workpiece 160 for theexpected number of pulses of the laser beam 120 and/or for the expectedtime required to form the production aperture 164. In this embodiment,the sensor 140 does not need to be aligned with the production aperture164 because the controller 150 controls the laser 110 based on the datagathered from forming the test aperture 162. However, in otherembodiments, the system 100 may form the production aperture 164 withoutfirst forming the test aperture 162. In these embodiments, the sensor140 can be aligned with the production aperture 164 to signal thecontroller 150 when the production aperture 164 has been formed, asdescribed above with reference to FIG. 2. In any of these embodiments,the system 100 can form a plurality of production apertures in themicrofeature workpiece 160.

In additional embodiments, the system 100 can also form blind aperturesthat do not extend completely through the microfeature workpiece 160. Inthese embodiments, the controller 150 can calculate the expected numberof pulses and/or the expected time required to form the blind productionaperture based on the data gathered from forming the test aperture 162in a process similar to that described above. More specifically, theexpected number of pulses of the laser beam 120 and the expected timerequired to form the blind production aperture can be determined bymultiplying the stored number of pulses and the stored elapsed time toform the test aperture 162, respectively, by a correction factor. Thecorrection factor in this application can adjust for differences in theworkpiece material and thickness as described above to underdrill theworkpiece for forming a blind production aperture. The correction factoralso adjusts for the difference between the depth of the test aperture162 and the desired depth of the blind production aperture. In otherembodiments, the correction factor can also adjust for other factors.

One feature of the system 100 of the illustrated embodiment is that itprovides good control of the exposure time that the microfeatureworkpiece 160 is subject to the laser beam 120. The laser beam 120 canbe shut off after an aperture is formed because either the sensor 140provides real-time feedback to the controller 150 or the controller 150is able to accurately predict when the aperture has been formed. Anadvantage of this feature is that the heat-affected zone in themicrofeature workpiece 160 is mitigated because the laser beam 120 isshut off in a timely manner. In prior art systems, the laser beamcontinues to pulse even after an aperture is formed and consequentlyincreases the size of the heat-affected zone in the workpiece; suchsizable heat-affected zones are detrimental to microelectronic devicesbecause doped elements can migrate within the zone. Another advantage ofthe illustrated system 100 is that it enables high throughput usinglasers and prolongs the life of the laser 110 because the number ofpulses of the laser beam 120 required to form the apertures is reduced.

Another feature of the system 100 of the illustrated embodiment is thatthe system 100 consistently forms accurate apertures in the microfeatureworkpiece 160. An advantage of this feature is that apertures areconsistently formed with a desired depth. The ability of the system 100to more precisely determine the number of pulses of the laser beam 120and/or the elapsed time to form a through hole allows the system 100 toavoid overdrilling and underdrilling.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustrationbut that various modifications may be made without deviating from thespirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

We claim:
 1. A method for forming an aperture in a microfeatureworkpiece, the method comprising: positioning the microfeature workpiecebetween a laser and an electromagnetic radiation sensor; directing alaser beam from the laser toward the microfeature workpiece to form afirst hole in the microfeature workpiece while the microfeatureworkpiece is positioned between the laser and the electromagneticradiation sensor; determining a number of pulses of the laser beamand/or an elapsed time to form the first hole by sensing when the laserbeam passes through the microfeature workpiece with the sensor;determining a desired depth for a second hole in the microfeatureworkpiece; and automatically controlling the laser beam to form aplurality of second holes based on the determined number of pulsesand/or the determined elapsed time, a depth of the first hole, and thedesired depth of the second hole.
 2. The method of claim 1 wherein thefirst hole is a test aperture and the second hole is a productionaperture, and wherein the method further comprises forming a pluralityof production apertures by controlling the laser beam based on thedetermined number of pulses and/or the determined elapsed time to formthe test aperture.
 3. The method of claim 1 wherein: the microfeatureworkpiece includes a first surface and a second surface opposite thefirst surface; and the method further comprises supporting themicrofeature workpiece with a workpiece carrier so that a center regionof the first surface and a center region of the second surface do notcontact the workpiece carrier while directing the laser beam.
 4. Themethod of 1 wherein the first hole is a through aperture and the secondhole is a bling aperture, and wherein the method further comprises:determining a number of pulses of the laser beam and/or an elapsed timeto form the through aperture; and controlling the laser beam based onthe determined number of pulses and/or the determined elapsed time toform a plurality of blind apertures in the microfeature workpiece. 5.The method of claim 1 wherein the first hole is a test through apertureand the second hole a production through aperture, and wherein themethod further comprises: determining a number of pulses of the laserbeam and/or an elapsed time to form the test through aperture; andcontrolling the laser beam based on the determined number of pulsesand/or the determined elapsed time to form a plurality of productionthrough apertures in the microfeature workpiece.
 6. The method of claim1, further comprising supporting the microfeature workpiece by engaginga perimeter edge of the workpiece with a workpiece carrier.